Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies.
IXSH40N120L2KHV
Our proven Technology
1200 V with low RDS(on) = 80 mΩ. SiC MOSFET technology with -3/+15…+18 V gate drive. Low input capacitance Ciss = 1214 pF. Ultra-fast intrinsic body diode with trr = 28.6 ns. Kelvin source connection. Low conduction losses. Low gate drive power requirements. Low thermal management effort. Suitable for had-switching. Optimized gate control. Solar inverters. UPS. Switch mode power Supplies. EV charging infrastructures. Motor drives. Induction heating. Industrial power Supply.
Specifications
| Weight | 0.0067 kg |
|---|---|
| Weight (g) | 6.7 |
| Fast Intrinsic Rectifier | Maximum virtual junction temperature of Tvj = 175 ⁰C |
| AC and DC Motor Drives | High voltage DC/DC converters |
| Business Group | POWER SEMI |
| Product Line | SIC |
| Cont. Drain Curr. 25C (A) | 40 |
| Drain Source (V) | 1200 |
| Max On-Resistance 25C (Ohm) | 0.08 |
| Max Op Junc Temp (°C) | 175 |
| Max Reverse Recovery (ns) | |
| Rth (j-c) (K/W) | 0.6 |
| Voltage (V) | 1200 |
| Current (A) | 40 |
Features and benefits
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Download file: IXSH40N120L2KHV_datasheet