These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.
IXTP170N13X4
Our proven Technology
Low on-resistance RDS(ON) and gate charge Qg. dv/dt ruggedness. Avalanche capability. Synchronous rectification in switching power supplies. Motor control (48V-80V systems). Uninterruptible power supplies. Electric forklifts. Class-D audio amplifiers. Telecom systems.
Specifications
| Fast Intrinsic Rectifier | International standard packages |
|---|---|
| AC and DC Motor Drives | Dc-dc converters |
| Package Type | TO-220 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 170 |
| Drain Source (V) | 135 |
| Gate Charge (nC) | 105 |
| Input Capacitance CISS (pF) | 5460 |
| Max On-Resistance 25C (Ohm) | 0.0063 |
| Max Op Junc Temp (°C) | 175 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 480 |
| Rev Trans Capacit. CRSS (pF) | 29 |
| Rth (j-c) (K/W) | 0.31 |
| Typ Rev Recov Time(ns) | 86 |
| Voltage (V) | 135 |
| Current (A) | 170 |
Features and benefits
More information and download request
For more information, access to the product datasheet, or to get in touch with one of our specialists. Please fill out the form below.
Thank you for your request
The datasheet is available below. We will respond to your request promptly.
Download file: IXTP170N13X4_datasheet