IXTQ130N10T

Our proven Technology

International Standard Packages. Low RDS(ON). Avalanche rated. Fast Intrinsic Rectifier. Switch-Mode and Resonant-Mode Power Supplies. Dc-dc converters. Uninterrupted Power Supplies. AC motor drives. Dc choppers. High Speed Power Switching Applications.

SKU: IXTQ130N10TCategories: MOSFETs (Si/SiC)

Specifications

Weight 0.0055 kg
Weight (g)

5.5

Fast Intrinsic Rectifier

High Current Handling Capability

AC and DC Motor Drives

Battery Chargers

Package Type

TO-3P

Business Group

POWER SEMI

Product Line

POWER MOSFET DISCRETE

Cont. Drain Curr. 25C (A)

130

Drain Source (V)

100

Gate Charge (nC)

104

Input Capacitance CISS (pF)

5080

Max On-Resistance 25C (Ohm)

0.0091

Max Reverse Recovery (ns)
Power Dissipation (W)

360

Rth (j-c) (K/W)

0.42

Typ Rev Recov Time(ns)

67

Voltage (V)

100

Current (A)

130

Features and benefits

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.
Advantages:

Easy to Mount
Space Savings
High power density

More information and download request

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Download file: IXTQ130N10T_datasheet

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