Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 °C.
These MOSFETs are ideal for high frequency applications in which high efficiency is desired.
LSIC1MO170T0750
Our proven Technology
Optimized for high-frequency, high-efficiency applications. Extremely low gate charge and output capacitance. Low gate resistance for high-frequency switching. Ultra-low on-resistance. Optimized package with separate driver source pin. MSL 1 Rated. High-frequency applications. Solar Inverters. UPS. Motor Drives. High Voltage Dc–dc converters. Battery Chargers. Induction Heating.
Specifications
| Weight | 0.005 kg |
|---|---|
| Weight (g) | 5 |
| Fast Intrinsic Rectifier | Normally-off operations at all temperatures |
| AC and DC Motor Drives | Switch Mode Power Supplies |
| Package Type | TO-263-7L |
| Business Group | POWER SEMI |
| Product Line | SIC |
| Cont. Drain Curr. 25C (A) | 4.5 |
| Drain Source (V) | 1700 |
| Max On-Resistance 25C (Ohm) | 0.75 |
| Max Op Junc Temp (°C) | 175 |
| Max Reverse Recovery (ns) | |
| Rth (j-c) (K/W) | 2.3 |
| Voltage (V) | 1700 |
| Current (A) | 4.5 |
Features and benefits
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Download file: LSIC1MO170T0750_datasheet