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IGBT dies 5SMY 86J1280

Our proven Technology

When looking for chipsets featuring highest switching performance, ruggedness and reliability, Hitachi Energy’s IGBT chips with accompanying diodes are certainly the preferred choice.

SKU: 5SMY 86J1280Categories: IGBT dies

Specifications

Brand

Hitachi Energy

Voltage (kV)

1.2

Chipset Type

SPT+

Size AxB (mm)

10.2 x 10.2

Thickness (µm)

140

Voltage VCES (V)

1200

IC (A)

75

ICM (A)

150

VCEsat (V)

2.1

Max dies per wafer

130

Features and benefits

Hitachi Energy’s SPT (Soft Punch Through) chipsets and their improved versions with lower losses (SPT+ and SPT++) are available at 1200 V and 1700 V. They feature highest output power per rated ampere due to a moderate chip shrinkage and thus larger die area. Additionally to these well-established planar chip technologies, starting 2022, Hitachi Energy is adding a new chipset based on the recently developed Trench Fine Pattern (TFP) technology.

Typical applications for 1200 V are power converters for industrial drives, solar energy, battery backup systems (UPS) and electrical vehicles. Applications for 1700 V also include industrial power conversion & drives, wind turbines and traction converters.

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