Hitachi Energy offers a broad portfolio of asymmetric GTOs with proven field reliability in various traction and industrial applications. Asymmetric GTOs are divided in two categories: Fine pattern and standard. Fine pattern GTOs with buffer layer have exceptionally low on-state and dynamic losses and are optimized for fast switching.
GTO 5SGF 40L4502
Our proven Technology
One might be assuming that the rapid advance of the IGBT would spell an equally rapid end to the GTO era. The demand for these devices, however, is still strong today.
Specifications
Brand | Hitachi Energy |
---|---|
GTO type | Asymmetric fine pattern GTO with buffer layer |
VDRM (V) | 4500 |
VDC (V) | 2800 |
VRRM (V) | 17 |
ITGQM (A) | 4000 |
at Cs (µF) | 6 |
ITAVM (A) | 1180 |
TC (°C) | — |
ITSM 10 ms (kA) | 25 |
VT ITGQM TVJM (V) | 3.8 |
VT0 TVJM (V) | 1.2 |
rT (mΩ) | 0.65 |
TVJM (°C) | 125 |
RthJC (K/kW) | 11 |
RthCH (K/kW) | 3 |
Fm (kN) | 33 |
Housing | See datasheet |
Features and benefits
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Download file: Hitachi Energy Power Semiconductors 2024